Web29 Jan 2024 · Prevention technique for latchup : To reduce gain product ß1 X ß2 : Move nwell & N+ source & drain farther apart increases width of base of Q1 and reduce gain ß1 and tthat will reduce Ic current . Buried N+ layer in well reduce gain of Q2 (ß2) Reduce well and substrate resistances, producing lower voltage drops : WebMarty Johnson, Roger Cline, Scott Ward, Joe Schichl ABSTRACT This document describes and discusses the topic of CMOS Latch-Up ranging from theory to testing of products. …
Power management can cause latchup in CMOS chips - EDN
WebThe currents produced by ionization-induced latchup in a microelectronic device can lead to catastrophic failure of that device. Consequently, devices to be used in satellite systems, particularly CMOS devices, must be screened for latchup. Devices that are sensitive to latchup typically are eliminated from consideration in space systems. Web19 Oct 2005 · Focused, pulsed laser-light is used to investigate single-event latchup in an analog-to-digital converter (AD9240) through the generation of charge collection spectra and their dependence on bias ... c# string format 0:f
Earlier Is Better In Latch-Up Detection - Semiconductor …
WebSLYA014A Latch-Up, ESD, and Other Phenomena 5 •The parasitic thyristor can be triggered by a rapid rise of the supply voltage.This effect often was observed in earlier generations … Web24 Mar 2015 · Latchup is triggered by forward biasing IC junctions that are part of parasitic (unwanted but unavoidable) thyristor structures. The text/example is talking about latch-up and the risk of overvoltage. It says that the capacitor can be overcharged, causing failure of the parasitic diode. FvM said: Web1 Apr 2004 · The semiconductor industry relies on latchup testing of integrated circuits (ICs) to detect and prevent catastrophic failures under extreme conditions. The test is … c# string format 000